Hamamatsu Photonics has introduced a new range of silicon detectors and image sensors that offer enhanced near-infrared sensitivity.
Using unique laser processing technology, MEMS structures can be fabricated on the silicon surface which act to reduce reflections and increase the surface area of the active element.
This process drastically increases the sensitivity in wavelengths longer than 800nm.
The S11519 series are silicon avalanche photodiodes (APDs) utilizing this new technology, offering ultra-high sensitivities at 1000nm, of between 70-75A/W at a gain of 100.
Compared to conventional APDs designed for YAG laser detection, the S11519 series offers an additional 15-20A/W photosensitivity, under the same operating conditions.
At 1.06µm, the quantum efficiency of these new APDs reaches 40%, compared to 20% for a conventional APD.
The S11519 series detectors are available in 1mm diameter and 3mm diameter active area types, which offer bandwidths of 400MHz and 230MHz respectively.
The S11519 is specially designed for low bias operation, with improved breakdown voltage, dark current and cut-off frequency characteristics compared to a conventional APD.
The increased sensitivity in the near-infrared region makes the S11519 IR-Enhanced APDs suitable for a wide range of applications, including YAG laser monitors, high speed IR measurements, and many more.