Veeco Instruments Inc. has introduced the GENxplor™ Molecular Beam Epitaxy (MBE) Deposition System, the industry’s first fully-integrated MBE system for the compound semiconductor R&D market.
The GENxplor creates high quality epitaxial layers on substrates up to 3” in diameter and is ideal for cutting edge research on a wide variety of materials including GaAs, nitrides, and oxides.
“The compound semiconductor R&D community asked for a more affordable, flexible, and easy-to-use MBE system and Veeco has delivered with the GENxplor,” commented Jim Northup, Veeco’s Vice President and General Manager.
Northup continued, “We have repackaged Veeco’s industry-leading MBE technology into a novel ‘all-in-one’ design that combines the reactor and electronics on a single frame. It will change the way researchers use MBE.”
The GENxplor uses Veeco’s proven GEN10™ growth chamber design and features unmatched process flexibility, ideal for materials research on emerging technologies such as UV LEDs, high-efficiency solar cells, and high-temperature superconductors.
Its efficient single frame design combines all vacuum hardware with on-board electronics to make it up to 40% smaller than other MBE systems, saving valuable lab space. Because the manual system is integrated on a single frame, installation time is reduced.
The open architecture design of the GENxplor also improves ease-of-use, provides convenient access to effusion cells, and allows easier serviceability when compared to other MBE systems.
When coupled with Veeco’s recently introduced retractable sources, the GENxplor system represents the state-of-the-art in oxide materials research.
In recognition of the growing influence and importance of China in the field of MBE research, Veeco is launching the GENxplor at this week’s China MBE Conference in Shanghai.