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Strain Improves Performance of Atomically Thin Semiconductor Material

News   May 11, 2018 | Original Story by Colin Poitras for the University of Connecticut.

 
Strain Improves Performance of Atomically Thin Semiconductor Material

Michael Pettes, left, assistant professor of mechanical engineering, and Ph.D. student Wei Wu check a specially engineered device they created to exert strain on a semiconductor material only six atoms thick. Credit: Peter Morenus/UConn.

 
 
 

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