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Sensofar and Linkam Develop Technique For Characterising The Temperature-Induced Topographical Evolution of Nanoscale Materials

Product News   Jun 02, 2021

 
Sensofar and Linkam Develop Technique For Characterising The Temperature-Induced Topographical Evolution of Nanoscale Materials

Stacked 4D view of the topographies extracted from two samples corresponding to different chip designs from silicon wafers (a) sample A and (b) sample B for visual comparison of the experimented bow change when samples go from 30ºC to 380ºC.

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