Study of CO2 Adsorption on Amorphous HfO2 using PTA on the Netzsch 449
HfO2 is a prospective high-k replacement for SiO2 for future integrated circuits. We study energetic of amorphous and nanocrystalline hafnium oxide by high temperature oxide melt solution calorimetry to establish critical sizes where phase stability switches by surface energy terms.
