FEI Announces New Verios Extreme High Resolution SEM
Product News Dec 28, 2012
FEI extends its leadership in the high-resolution scanning electron microscopy (SEM) market with the launch of the new Verios™ XHR SEM.
The Verios provides the sub-nanometer resolution and enhanced contrast needed for precise measurements on beam-sensitive materials in advanced semiconductor manufacturing and materials science applications.
“The Verios XHR SEM extends the lifetime of SEM as an important measurement tool in semiconductor process control labs by allowing engineers to measure beam-sensitive materials and structures that are too small for conventional SEM,” stated Rudy Kellner, vice president & general manager, Electronics Business Unit, FEI.
Kellner continued, “When combined with our IC3D™ software, the Verios is a robust instrument that can provide the precise measurements they need to control processes at the 22nm technology node and below.”
Trisha Rice, FEI’s vice president & general manager of the Materials Science Business Unit adds, “For materials scientists, the Verios will also enable important new insights by extending sub-nanometer imaging and characterization to novel materials being developed today. This will allow researchers to capture the high resolution, high contrast images required, without the need to transition to TEM or other imaging techniques.”
The Verios is the second generation of FEI’s leading XHR SEM family. At low kV, where the performance of conventional SEM degrades significantly, the Verios system’s advanced optics deliver impressive sensitivity to surface detail.
It allows any user to switch quickly between various operating conditions, maintain sample cleanliness, and obtain sub-nanometer resolution at any accelerating voltage from
1 kV to 30 kV.
In addition to its extreme high-resolution performance, the Verios introduces new detection technologies.
The optimized signal collection and advanced filtering abilities not only provide higher and more flexible contrast generation, but also allow for a greater range of samples to be investigated.
Many beam-sensitive or non-conductive materials can now be accurately observed at the nanoscale, without any preparation.