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JPSA Introduces IX200 UV Laser at SEMICON West
J. P. Sercel Associates (JPSA) has announcedc that ot will hold a brief (20 – 30 minute) press conference at SEMICON WEST 2006 to introduce the IX200 UV Laser wafer processing and micromachining system.
The press conference will be held in the JPSA Booth, #5179, in the North Hall at the Moscone Center, Tuesday, July 11, at 2:00 p.m.
Press kits will be available in the booth (and in the Press Room); after a short technical presentation by Bill Kallgren, there will be time for Q&A.
The compact IX200 is suitable for both front and back end materials processing and is available in both DPSS (solid state) and Excimer UV laser configurations.
The IX200 ChromaDice™ DPSS version is a wafer dicing (singulation) system also suitable for wafer trimming and scribing, and many other directwrite applications.
Its UV diodepumped solidstate (DPSS) laser system is designed to deliver highspeed wafer dicing and cutting with typical yields 99% at $2 per wafer.
The process is tolerant of wafer warp and bow and suitable for all wafer types.
The IX200 system is also available in an excimer laser version for via drilling, micromachining, thin film patterning and many other semiconductor packaging applications including LED liftoff.
The Class 1, fully enclosed IX200 ChromaDice™ is available in 266nm or 355nm UV DPSS laser wavelengths for a wide range of process capabilities; it can achieve cuts as narrow as 2.5 microns in width, yielding as much as 24% more die per wafer with die yields 99%.
It delivers results on GaAs, Si and other materials and scribes up to 6" wafers, including sapphire LED wafers.
The IX200 ChromAblate™ system is an excimer laser configuration. At a 248nm wavelength, it is suitable for micromachining of Si, GaN, GaAs and other IIIV materials, as well as polymers, ceramics and many others.
An optional 193nm beam delivery package is also available, useful for polymers that do not couple well with the longer UV wavelength (e.g., Pebax), as well as many of the more optically transparent materials that do not achine well under 248nm wavelength UV laser energy.